an amp company rf mosfet power transistor, 2oow, 28v 2 - 175 mhz DU28200M features absolute maximum ratings at 25c parameter i symbol i rating 1 units 1 i drain-sourcevoltage ( v,, ( 65 i v i gate-source voltage v os 20 v drain-source current ?ds 20 a n-channel enhancemenr mode device dmos structure lower capacitances for broadband operation high saturated output power lower noise figure than competitive devices i power dissipation 1 p, / 389 1 w 1 junction temperature storagetemperature tj 200 ?c t stg -65 to +150 ?c thermal resistance v2.00 p&--4 i electrical characteristics at 25c parameter test conditions drain-source breakdown voltage drain-source leakage current gate-source leakage current bvdss 65 - v v,,=o.o v, i,,=250 ma ?cm 5.0 n-ia v,,=28.0 v, v,,=o.o v? ?gss 5.0 pa v,,=20.0 v, v,sto.o v 1 gate threshold voltage i vg,rr,, 1 2.0 1 6.0 1 v i v,,=~o.ov, 1,,=500.0 ma i fonvardtransconductance input capacitance output capacitance gm c iss c oss 2.5 - s v,,=lo.o v, i,,=50 a, ~v,,=l .o v, 80~ pulse? - 225 pf vr,,=28.0 v, f=l .o mhz? 200 pf v,,=28.0 v, f=l .o mhz? ( reverse capacitance i cfss 1 - ( 40 1 pf 1 v,,=28.0 v, f=l.o mhz? i power gain drain efficiency load mismatchtolerance gp 13 - db v,,=28.0 v, i,,=1 000 ma, pe~200.0 w, f=l75 mhz % 55 - % v,,=28.0 v. i,,=1 000 ma, p,, -200.0 w, f=175 mhz vswr-t - lo:1 - v-,=28.0 v. i,,=1000 ma. p,,s200.0 w, f=175 mhz * per side specifications subject to change without notice. 9-62 north america: tel. (800) 366-2266 n asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 m/a-com, inc. m europe: tel. +44 (1344) 869 595 fax +44(1344)300 020
rf mosfet power transistor, 2oow, 28v DU28200M v2.00 typical broadband performance curves gain vs frequency efficiency vs frequency 30 v&3 v l,o=loo ma p,f200 w 6or vdd=28 v i,,=1000 ma p,,=200 w 10 -i - 50 25 50 100 150 200 25 50 loo 150 200 frequency (mhz) frecxjency (mhz) power output vs power input 300 v,,=28 v idp=l 000 ma 100 mhz z 250 30 mhz 5 200 mhz p 200 5 0 a 150 f ; cl- 100 . f 50 0 0.5 1 2 3 4 5 power input (w) specifications subject to change without notice. mia-com, inc. 9-63 north america: tel. (800) 366-2266 w asia/pacific: tel. +81 (03) 3226-1671 m europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
rf mosfet power transistor, 2oow, 28v DU28200M v2.00 typical device impedance frequency (mhz) z,n (ohms) z load (ohms) 30 2.7 - j 4.8 7.2 - j 1.9 100 1.6 -j 3.0 5.25 - j 1.4 150 1.5 -j 2.0 5.0 - j 0.7 i 175 1.6 -j 1.0 5.2 - j 0.6 200 1.8-j0.5 5.5 - j 0.5 i v,,=28 v, i,,=1000 ma, p0,~200 watts z,, is the series equivalent input impedance of the device from gate to source. z load is the series optimum equivalent load impedance as measured from drain to drain. rf test fixture specifications subject to change without notice. 9-64 north america: tel. (800) 366-2266 w asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 m/a-com, inc. europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
|
